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Aug 29
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ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely
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Jun 11
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ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of Electric Vehicle Inverters
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May 15
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ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation
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Feb 15
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ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
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Dec 14
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ROHM Completes Demonstration of Manufacturing Process Optimization by Applying Quanmatic's Quantum Technology
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Dec 8
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Japan Sets Aside $902 Million for Chipmakers Toshiba and Rohm
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Dec 6
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ROHM Now Offers the Industry’s Largest* Library of LTspice Models by Adding SiC Power Devices and IGBTs
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Nov 29
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ROHM’s New High-Power 120W Laser Diode for LiDAR: Increasing Measurement Range by Reducing Wavelength Temperature Dependence by 66%
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Nov 8
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ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
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Nov 7
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ROHM Completes Acquisition of New Production Site
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Nov 2
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ROHM Develops the First Silicon Capacitor BTD1RVFL Series
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Oct 18
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ROHM’s New Five-Model Lineup of Low ON-Resistance 100V Dual MOSFETs
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